Shanghai, China – Toshiba Electronic Components and Storage Corporation (” Toshiba “) today announced the launch of a 150V N-channel power MOSFET- “TPH9R00CQH”.
The device uses the latest generation [1] “U-MOSX-H” process and is suitable for industrial equipment switching power supplies, including data center power supplies and communication base station power supplies.
The product starts to support bulk shipping today.

Compared with the 150V product TPH1500CNH using the current generation “U-MOSø-H” process, the drain-source on-resistance of TPH9R00CQH is reduced by about 42%.
Structural optimization of the new MOSFETs promotes a balance between the source-drain on-resistance and the two charge characteristics [2] [3], resulting in excellent low loss characteristics.
In addition, the peak voltage between drain and source is reduced when the switch is operated, helping to reduce electromagnetic interference (EMI) from the switching power supply.
The product is available in both the SOP Advance and the more widely adopted SOP Advance (N) surface mount packages.

At the same time, Toshiba also provides various tools to support the circuit design of switching power supplies.
In addition to the G0 SPICE model that quickly verifies circuit function, a high-precision G2 SPICE model that accurately reproduces transient characteristics is now available.

Toshiba will further expand its MOSFET product line to improve the power efficiency of devices by reducing losses, thereby helping them reduce power consumption.